IRF7303PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7303PBF
Manufacturer

Infineon
ChipWorker Part#

CW9826400
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 30V 4.9A
Documentation

Datasheet

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IRF7303PBF Specifications

Attribute	Attribute Value

Part Number	IRF7303PBF
Manufacturer	Infineon
ChipWorker Part#	CW9826400
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.05 Ω
Polarity	Dual N-Channel
Power Dissipation	2 W
Threshold Voltage	1 V
Input Capacitance	520pF @25V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	4.9A
Rise Time	21 ns
Thermal Resistance	62.5℃/W (RθJA)
Input Capacitance (Ciss)	520pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	7.7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not For New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRF7303PBF is a 30V dual N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
Dynamic dV/dt rating
Surface mount

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