IRF7319PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7319PBF
Manufacturer

Infineon
ChipWorker Part#

CW5380900
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N+P 30V 6.5A/4.9A
Documentation

Datasheet

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IRF7319PBF Specifications

Attribute	Attribute Value

Part Number	IRF7319PBF
Manufacturer	Infineon
ChipWorker Part#	CW5380900
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2 W
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.029 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	2 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	6.5A/4.9A
Input Capacitance (Ciss)	650pF @25V(Vds)
Input Power (Max)	2 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRF7319PBF is a 30V dual N-channel and P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
Surface mount
Fully avalanche rated
Dynamic dV/dt rating

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