IRF7324PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7324PBF
Manufacturer

Infineon
ChipWorker Part#

CW11097303
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC P-CH 20V 9A
Documentation

Datasheet

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IRF7324PBF Specifications

Attribute	Attribute Value

Part Number	IRF7324PBF
Manufacturer	Infineon
ChipWorker Part#	CW11097303
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2 W
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.018 Ω
Polarity	Dual P-Channel
Power Dissipation	2 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20 V
Continuous Drain Current (Ids)	9A
Rise Time	36 ns
Input Capacitance (Ciss)	2940pF @15V(Vds)
Input Power (Max)	2 W
Fall Time	190 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7324PBF is a -20V dual P-channel new trench HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
Trench technology
Ultra low on-resistance
Dual P-channel MOSFET
Low profile (<1.1mm)
2.5V Rated

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