IRF7343PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7343PBF
Manufacturer

Infineon
ChipWorker Part#

CW9323063
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N+P 55V 4.7A/3.4A
Documentation

Datasheet

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IRF7343PBF Specifications

Attribute	Attribute Value

Part Number	IRF7343PBF
Manufacturer	Infineon
ChipWorker Part#	CW9323063
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2 W
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.05 Ω
Polarity	N+P
Power Dissipation	2 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	4.7A/3.4A
Thermal Resistance	62.5℃/W (RθJA)
Input Capacitance (Ciss)	740pF @25V(Vds)
Input Power (Max)	2 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not For New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7343PBF is a 55V dual N-channel and P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
Surface mount
Dynamic dV/dt rating
Fully avalanche rated

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