IRF7413ZPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7413ZPBF
Manufacturer

Infineon
ChipWorker Part#

CW11549115
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 30V 13A
Documentation

Datasheet

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IRF7413ZPBF Specifications

Attribute	Attribute Value

Part Number	IRF7413ZPBF
Manufacturer	Infineon
ChipWorker Part#	CW11549115
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.01 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	13A
Rise Time	6.3 ns
Input Capacitance (Ciss)	1210pF @15V(Vds)
Input Power (Max)	2.5 W
Fall Time	3.8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7413ZPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The control and synchronous rectifier MOSFET is suitable for graphics cards and POL converters in telecommunication systems.
Ultra-low gate impedance
Very low static drain-to-source ON-resistance
100% Tested for gate resistance

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