IRF7425PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7425PBF
Manufacturer

Infineon
ChipWorker Part#

CW8351796
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC P-CH 20V 15A
Documentation

Datasheet

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IRF7425PBF Specifications

Attribute	Attribute Value

Part Number	IRF7425PBF
Manufacturer	Infineon
ChipWorker Part#	CW8351796
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0082 Ω
Polarity	P-Channel
Power Dissipation	2.5 W
Part Family	IRF7425
Threshold Voltage	1.2 V
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	-15.0 A
Rise Time	20 ns
Input Capacitance (Ciss)	7980pF @15V(Vds)
Input Power (Max)	2.5 W
Fall Time	160 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRF7425PBF is a -20V single P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The package has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques.
Ultra low on-resistance
Surface mount

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