IRF7493PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7493PBF
Manufacturer

Infineon
ChipWorker Part#

CW12666936
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 80V 9.3A
Documentation

Datasheet

IRF7493PBF Global Supplier

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IRF7493PBF Specifications

Attribute	Attribute Value

Part Number	IRF7493PBF
Manufacturer	Infineon
ChipWorker Part#	CW12666936
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.015 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	80 V
Breakdown Voltage (Drain to Source)	80 V
Continuous Drain Current (Ids)	9.3A
Rise Time	7.5 ns
Input Capacitance (Ciss)	1510pF @25V(Vds)
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Tc)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7493PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters and high side load switch.
Fully characterized capacitance including effective COSS to simplify design
Fully characterized avalanche voltage and current
Fast switching

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