IRF7509TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7509TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW1934450
Category

MOSFET, MOSFET Transistor
Package

Micro-8
Description

Micro N+P 30V 2.7A/2A
Documentation

Datasheet

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IRF7509TRPBF Specifications

Attribute	Attribute Value

Part Number	IRF7509TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW1934450
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	Micro-8
Power Rating	1.25 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.11 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	1.25 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	2.7A/2A
Input Capacitance (Ciss)	210pF @25V(Vds)
Input Power (Max)	1.25 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.25 W
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Size-Length	3 mm
Size-Width	3 mm
Size-Height	0.86 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7509TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Generation V technology
Ultra low ON-resistance
Low profile
Fast switching performance

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