IRF7807ZPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7807ZPBF
Manufacturer

Infineon
ChipWorker Part#

CW47360359
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 30V 11A
Documentation

Datasheet

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IRF7807ZPBF Specifications

Attribute	Attribute Value

Part Number	IRF7807ZPBF
Manufacturer	Infineon
ChipWorker Part#	CW47360359
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0138 Ω
Polarity	N-CH
Power Dissipation	2.5 W
Threshold Voltage	1.8 V
Input Capacitance	770pF @15V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	11A
Rise Time	6.2 ns
Input Capacitance (Ciss)	770pF @15V(Vds)
Fall Time	3.1 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7807ZPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for graphics cards and POL converters.
Ultra-low gate impedance
Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
100% Rg tested
Fully characterized avalanche voltage and current

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