IRF7809AVPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7809AVPBF
Manufacturer

Infineon
ChipWorker Part#

CW12133437
Category

MOSFET, MOSFET Transistor
Package

SOIC
Description

SOIC N-CH 30V 13.3A
Documentation

Datasheet

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IRF7809AVPBF Specifications

Attribute	Attribute Value

Part Number	IRF7809AVPBF
Manufacturer	Infineon
ChipWorker Part#	CW12133437
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.007 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	13.3A
Rise Time	36 ns
Input Capacitance (Ciss)	3780pF @16V(Vds)
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7809AVPBF is a HEXFET® single N-channel Power MOSFET designed for vapour phase, infrared, convection or wave soldering techniques. This new device employs advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-to-DC converters that power the latest generation of microprocessors. The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS (ON), gate charge and CdV/dt-induced turn-ON immunity. It offers particularly low RDS (ON) and high CdV/dt immunity for synchronous FET applications. Power dissipation of greater than 2W is possible in a typical PCB mount application.
Low conduction losses
Low switching losses
100% Rg tested
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

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