IRF7842PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7842PBF
Manufacturer

Infineon
ChipWorker Part#

CW9411486
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

MOSFET; Power; N-Ch; VDSS 40V; RDS(ON) 4 Milliohms; ID 18A; SO-8; PD 2.5W; VGS +/-20V
Documentation

Datasheet

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IRF7842PBF Specifications

Attribute	Attribute Value

Part Number	IRF7842PBF
Manufacturer	Infineon
ChipWorker Part#	CW9411486
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Output Current	≤2.50 A
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.005 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	2.25 V
Input Capacitance	4500pF @20V
Drain to Source Voltage (Vds)	40 V
Breakdown Voltage (Drain to Source)	40 V
Rise Time	12 ns
Input Capacitance (Ciss)	4500pF @20V(Vds)
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7842PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The synchronous MOSFET is suitable for Notebook processor power, isolated and non-isolated DC-to-DC converters.
Low gate charge
Fully characterized avalanche voltage and current
Ultra-low gate impedance
Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage

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