IRF7862PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7862PBF
Manufacturer

Infineon
ChipWorker Part#

CW50585236
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 30V 21A
Documentation

Datasheet

IRF7862PBF Global Supplier

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IRF7862PBF Specifications

Attribute	Attribute Value

Part Number	IRF7862PBF
Manufacturer	Infineon
ChipWorker Part#	CW50585236
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0037 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	5.4 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	21A
Rise Time	19 ns
Input Capacitance (Ciss)	4090pF @15V(Vds)
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7862PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for battery protection, high side and low side load switch, notebook processor power and isolated DC-to-DC converters.
Ultra-low gate impedance
Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
100% Rg tested
20V VGS Maximum gate rating

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