IRF8010PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF8010PBF
Manufacturer

Infineon
ChipWorker Part#

CW5134426
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 100V 80A
Documentation

Datasheet

IRF8010PBF Global Supplier

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IRF8010PBF Specifications

Attribute	Attribute Value

Part Number	IRF8010PBF
Manufacturer	Infineon
ChipWorker Part#	CW5134426
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	260 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.015 Ω
Polarity	N-Channel
Power Dissipation	260 W
Threshold Voltage	4 V
Input Capacitance	3830pF @25V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	80A
Rise Time	130 ns
Input Capacitance (Ciss)	3830pF @25V(Vds)
Input Power (Max)	260 W
Fall Time	120 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	260000 mW
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	15.24 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRF8010PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
Fully characterized capacitance including effective COSS to simplify design
Fully characterized avalanche voltage and current
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

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