IRF830 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF830
Manufacturer

ST Microelectronics
ChipWorker Part#

CW52495844
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 500V 4.5A 3Pin(3+Tab) TO-220
Documentation

Datasheet

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IRF830 Specifications

Attribute	Attribute Value

Part Number	IRF830
Manufacturer	ST Microelectronics
ChipWorker Part#	CW52495844
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	4.50 A
Power Dissipation	100 W
Input Capacitance	610 pF
Gate Charge	30.0 nC
Drain to Source Voltage (Vds)	500 V
Continuous Drain Current (Ids)	4.50 A
Rise Time	8 ns
Input Capacitance (Ciss)	610pF @25V(Vds)
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	100W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead

Product Description

DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on)= 1.35Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

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