IRF840B - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF840B
Manufacturer

Fairchild
ChipWorker Part#

CW122351736
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 500V 8A 3Pin(3+Tab) TO-220AB Rail
Documentation

Datasheet

IRF840B Global Supplier

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IRF840B Specifications

Attribute	Attribute Value

Part Number	IRF840B
Manufacturer	Fairchild
ChipWorker Part#	CW122351736
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	650 mΩ
Polarity	N-Channel
Power Dissipation	134 W
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	8.00 A
Rise Time	65 ns
Input Capacitance (Ciss)	1800pF @25V(Vds)
Input Power (Max)	134 W
Fall Time	75 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	134W (Tc)
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Size-Length	10.67 mm
Size-Width	4.7 mm
Size-Height	16.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features
• 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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