IRF8714PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF8714PBF
Manufacturer

Infineon
ChipWorker Part#

CW6109489
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 30V 14A
Documentation

Datasheet

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IRF8714PBF Specifications

Attribute	Attribute Value

Part Number	IRF8714PBF
Manufacturer	Infineon
ChipWorker Part#	CW6109489
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0087 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	14A
Rise Time	9.9 ns
Input Capacitance (Ciss)	1020pF @15V(Vds)
Input Power (Max)	2.5 W
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF8714PBF is a 30V single N-channel HEXFET® Power MOSFET uses silicon technology. The power MOSFET has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Very low gate charge
Very low RDS (ON) at 4.5V VGS
Ultra-low gate impedance
Fully characterized avalanche voltage and current

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