IRF8736PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF8736PBF
Manufacturer

Infineon
ChipWorker Part#

CW10023729
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 30V 18A
Documentation

Datasheet

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IRF8736PBF Specifications

Attribute	Attribute Value

Part Number	IRF8736PBF
Manufacturer	Infineon
ChipWorker Part#	CW10023729
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0048 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	18A
Rise Time	15 ns
Maximum Forward Voltage (Max)	1 V
Input Capacitance (Ciss)	2315pF @15V(Vds)
Input Power (Max)	2.5 W
Fall Time	7.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF8736PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
Very low RDS (ON) at 4.5V VGS
Low gate charge
Fully characterized avalanche voltage and current
100% Tested for RG

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