IRF8788PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF8788PBF
Manufacturer

Infineon
ChipWorker Part#

CW21846492
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 30V 24A
Documentation

Datasheet

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IRF8788PBF Specifications

Attribute	Attribute Value

Part Number	IRF8788PBF
Manufacturer	Infineon
ChipWorker Part#	CW21846492
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0023 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	24A
Rise Time	24 ns
Input Capacitance (Ciss)	5720pF @15V(Vds)
Fall Time	11 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF8788PBF is a HEXFET® single N-channel Power MOSFET optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The latest HEXFET® power MOSFET silicon technology into the industry standard package. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for Notebook and Netcom applications.
Very low gate charge
Low gate impedance
Fully characterized avalanche voltage and current
Low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
20V VGS Maximum gate rating

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