IRF9Z24NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF9Z24NPBF
Manufacturer

Infineon
ChipWorker Part#

CW967873
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB P-CH 55V 12A
Documentation

Datasheet

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IRF9Z24NPBF Specifications

Attribute	Attribute Value

Part Number	IRF9Z24NPBF
Manufacturer	Infineon
ChipWorker Part#	CW967873
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	45 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.175 Ω
Polarity	P-Channel
Power Dissipation	45 W
Threshold Voltage	4 V
Input Capacitance	350 pF
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	12A
Rise Time	55 ns
Input Capacitance (Ciss)	350pF @25V(Vds)
Input Power (Max)	45 W
Fall Time	37 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	45W (Tc)
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	8.77 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rated
175°C Operating temperature

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