IRF9Z34NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF9Z34NPBF
Manufacturer

Infineon
ChipWorker Part#

CW362170
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB P-CH 55V 19A
Documentation

Datasheet

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IRF9Z34NPBF Specifications

Attribute	Attribute Value

Part Number	IRF9Z34NPBF
Manufacturer	Infineon
ChipWorker Part#	CW362170
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	68 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Polarity	P-Channel
Power Dissipation	56 W
Input Capacitance	620 pF
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	19A
Rise Time	55 ns
Input Capacitance (Ciss)	620pF @25V(Vds)
Input Power (Max)	68 W
Fall Time	41 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	68W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rated
175°C Operating temperature

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