IRFB11N50APBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB11N50APBF
Manufacturer

VISHAY
ChipWorker Part#

CW1175261
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

TO-220-3 N-CH 500V 11A 520mΩ
Documentation

Datasheet

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IRFB11N50APBF Specifications

Attribute	Attribute Value

Part Number	IRFB11N50APBF
Manufacturer	VISHAY
ChipWorker Part#	CW1175261
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	11.0 A
Power Rating	170 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.52 Ω
Polarity	N-Channel
Power Dissipation	170 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	11.0 A
Rise Time	35 ns
Input Capacitance (Ciss)	1423pF @25V(Vds)
Input Power (Max)	170 W
Fall Time	28 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	170 W
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Size-Length	10.41 mm
Size-Width	4.7 mm
Size-Height	9.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRFB11N50APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.

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