IRFB23N20DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB23N20DPBF
Manufacturer

Infineon
ChipWorker Part#

CW10579932
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 200V 24A
Documentation

Datasheet

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IRFB23N20DPBF Specifications

Attribute	Attribute Value

Part Number	IRFB23N20DPBF
Manufacturer	Infineon
ChipWorker Part#	CW10579932
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	170 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Polarity	N-CH
Power Dissipation	170 W
Threshold Voltage	5.5 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	24A
Rise Time	32 ns
Input Capacitance (Ciss)	1960pF @25V(Vds)
Input Power (Max)	3.8 W
Fall Time	16 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.8W (Ta), 170W (Tc)
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	15.65 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRFB23N20DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
Fully characterized capacitance including effective COSS to simplify design
Fully characterized avalanche voltage and current

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