IRFB31N20DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB31N20DPBF
Manufacturer

Infineon
ChipWorker Part#

CW8978303
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 200V 31A
Documentation

Datasheet

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IRFB31N20DPBF Specifications

Attribute	Attribute Value

Part Number	IRFB31N20DPBF
Manufacturer	Infineon
ChipWorker Part#	CW8978303
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	200 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.082 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	5.5 V
Input Capacitance	2370 pF
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	31A
Rise Time	38 ns
Thermal Resistance	0.75℃/W (RθJC)
Input Capacitance (Ciss)	2370pF @25V(Vds)
Input Power (Max)	3.1 W
Fall Time	10 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.1W (Ta), 200W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	19.3 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRFB31N20DPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
Low gate to drain charge to reduce switching loss
Fully characterized capacitance and avalanche SOA
Surface mount

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