IRFB3206PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB3206PBF
Manufacturer

Infineon
ChipWorker Part#

CW1480775
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 60V 210A
Documentation

Datasheet

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IRFB3206PBF Specifications

Attribute	Attribute Value

Part Number	IRFB3206PBF
Manufacturer	Infineon
ChipWorker Part#	CW1480775
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	300 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.003 Ω
Polarity	N-CH
Power Dissipation	300 W
Threshold Voltage	4 V
Input Capacitance	6540 pF
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	210A
Rise Time	82 ns
Input Capacitance (Ciss)	6540pF @50V(Vds)
Fall Time	83 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	9.02 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability
Halogen-free

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