IRFB4020PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB4020PBF
Manufacturer

Infineon
ChipWorker Part#

CW2473690
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 200V 18A
Documentation

Datasheet

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IRFB4020PBF Specifications

Attribute	Attribute Value

Part Number	IRFB4020PBF
Manufacturer	Infineon
ChipWorker Part#	CW2473690
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	100 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Polarity	N-Channel
Power Dissipation	100 W
Threshold Voltage	4.9 V
Input Capacitance	1200 pF
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	18A
Rise Time	12 ns
Input Capacitance (Ciss)	1200pF @50V(Vds)
Input Power (Max)	100 W
Fall Time	6.3 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	100W (Tc)
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Size-Length	10.66 mm
Size-Width	4.82 mm
Size-Height	9.02 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8R load in half-bridge configuration amplifier. It is suitable for battery operated drive, full-bridge and push-pull application.
Low RDS (ON) for improved efficiency
Low Qg and Qsw for better THD and improved efficiency
Low QRR for better THD and lower EMI

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