IRFB4110PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB4110PBF
Manufacturer

Infineon
ChipWorker Part#

CW895240
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 100V 180A
Documentation

Datasheet

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IRFB4110PBF Specifications

Attribute	Attribute Value

Part Number	IRFB4110PBF
Manufacturer	Infineon
ChipWorker Part#	CW895240
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	370 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0045 Ω
Polarity	N-CH
Power Dissipation	370 W
Threshold Voltage	4 V
Input Capacitance	9620 pF
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	180A
Rise Time	67 ns
Input Capacitance (Ciss)	9620pF @50V(Vds)
Input Power (Max)	370 W
Fall Time	88 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	370W (Tc)
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Size-Length	10.67 mm
Size-Width	4.82 mm
Size-Height	9.02 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability

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