IRFB4212PBF - Infineon
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoIRFB4212PBF
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ManufacturerInfineon
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ChipWorker Part#CW9252653
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CategoryMOSFET, MOSFET Transistor
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PackageTO-220-3
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DescriptionTO-220AB N-CH 100V 18A
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DocumentationDatasheet
Payment Methods and Delivery
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IRFB4212PBF Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | IRFB4212PBF |
| Manufacturer | Infineon |
| ChipWorker Part# | CW9252653 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 60 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0725 Ω |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 18A |
| Rise Time | 28 ns |
| Input Capacitance (Ciss) | 550pF @50V(Vds) |
| Input Power (Max) | 60 W |
| Fall Time | 3.9 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60W (Tc) |
| expand all | |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.02 mm |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- The IRFB4212PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 150W per channel into 4R load in half-bridge topology. It is suitable for full-bridge and push-pull application.
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low QRR for better THD and lower EMI
Delivery
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Ordering Information
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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