IRFB4227PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB4227PBF
Manufacturer

Infineon
ChipWorker Part#

CW32123
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 200V 65A
Documentation

Datasheet

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IRFB4227PBF Specifications

Attribute	Attribute Value

Part Number	IRFB4227PBF
Manufacturer	Infineon
ChipWorker Part#	CW32123
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	190 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0197 Ω
Polarity	N-Channel
Power Dissipation	330 W
Threshold Voltage	5 V
Input Capacitance	4600 pF
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	65A
Rise Time	20 ns
Input Capacitance (Ciss)	4600pF @25V(Vds)
Input Power (Max)	330 W
Fall Time	31 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	330W (Tc)
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Size-Length	10.66 mm
Size-Width	4.82 mm
Size-Height	9.02 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.
175°C Operating temperature
Low QG for fast response
High repetitive peak current capability for reliable operation
Short fall and rise times for fast switching
Repetitive avalanche capability for robustness and reliability

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