IRFB4229PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB4229PBF
Manufacturer

Infineon
ChipWorker Part#

CW2985363
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 250V 46A
Documentation

Datasheet

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IRFB4229PBF Specifications

Attribute	Attribute Value

Part Number	IRFB4229PBF
Manufacturer	Infineon
ChipWorker Part#	CW2985363
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	330 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.038 Ω
Polarity	N-Channel
Power Dissipation	330 W
Threshold Voltage	5 V
Input Capacitance	4560pF @25V
Drain to Source Voltage (Vds)	250 V
Continuous Drain Current (Ids)	46A
Input Capacitance (Ciss)	4560pF @25V(Vds)
Input Power (Max)	330 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	330W (Tc)
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Size-Length	10.66 mm
Size-Width	4.82 mm
Size-Height	9.02 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Advanced process technology
Low Qg for fast response
High repetitive peak current capability for reliable operation
Short fall and rise times for fast switching
Repetitive avalanche capability for robustness and reliability

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