IRFB4710PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB4710PBF
Manufacturer

Infineon
ChipWorker Part#

CW3616875
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 100V 75A
Documentation

Datasheet

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IRFB4710PBF Specifications

Attribute	Attribute Value

Part Number	IRFB4710PBF
Manufacturer	Infineon
ChipWorker Part#	CW3616875
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	200 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.014 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	5.5 V
Input Capacitance	6160 pF
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	75A
Rise Time	130 ns
Input Capacitance (Ciss)	6160pF @25V(Vds)
Input Power (Max)	3.8 W
Fall Time	38 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.8W (Ta), 200W (Tc)
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Size-Length	10.54 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFB4710PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
Fully characterized capacitance including effective COSS to simplify design
Fully characterized avalanche voltage and current

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