IRFB7430PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB7430PBF
Manufacturer

Infineon
ChipWorker Part#

CW2188163
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 40V 409A
Documentation

Datasheet

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IRFB7430PBF Specifications

Attribute	Attribute Value

Part Number	IRFB7430PBF
Manufacturer	Infineon
ChipWorker Part#	CW2188163
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	375 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.001 Ω
Polarity	N-Channel
Power Dissipation	375 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	40 V
Continuous Drain Current (Ids)	409A
Rise Time	105 ns
Input Capacitance (Ciss)	14240pF @25V(Vds)
Fall Time	100 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	16.51 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IRFB7430PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Halogen-free

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