IRFB7434PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB7434PBF
Manufacturer

Infineon
ChipWorker Part#

CW4571250
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 40V 317A
Documentation

Datasheet

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IRFB7434PBF Specifications

Attribute	Attribute Value

Part Number	IRFB7434PBF
Manufacturer	Infineon
ChipWorker Part#	CW4571250
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	294 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.00125 Ω
Polarity	N-Channel
Power Dissipation	294 W
Threshold Voltage	3 V
Input Capacitance	10820 pF
Drain to Source Voltage (Vds)	40 V
Breakdown Voltage (Drain to Source)	40 V
Continuous Drain Current (Ids)	317A
Rise Time	68 ns
Input Capacitance (Ciss)	10820pF @25V(Vds)
Input Power (Max)	294 W
Fall Time	68 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	294W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	16.51 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRFB7434PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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