IRFB9N60APBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFB9N60APBF
Manufacturer

VISHAY
ChipWorker Part#

CW11486804
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220-3 N-CH 600V 9.2A 750mΩ
Documentation

Datasheet

IRFB9N60APBF Global Supplier

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IRFB9N60APBF Specifications

Attribute	Attribute Value

Part Number	IRFB9N60APBF
Manufacturer	VISHAY
ChipWorker Part#	CW11486804
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	9.20 A
Power Rating	170 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.75 Ω
Polarity	N-Channel
Power Dissipation	170 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	9.20 A
Rise Time	25 ns
Input Capacitance (Ciss)	1400pF @25V(Vds)
Input Power (Max)	170 W
Fall Time	22 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	170 W
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Size-Length	10.41 mm
Size-Width	4.7 mm
Size-Height	9.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRFB9N60APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.
Low gate charge Qg results in simple drive requirement
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current

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