IRFBG30PBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFBG30PBF
Manufacturer

VISHAY
ChipWorker Part#

CW816921
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

TO-220-3 N-CH 1000V 3.1A 5Ω
Documentation

Datasheet

IRFBG30PBF Global Supplier

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IRFBG30PBF Specifications

Attribute	Attribute Value

Part Number	IRFBG30PBF
Manufacturer	VISHAY
ChipWorker Part#	CW816921
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	1.00 kV
Current Rating	3.10 A
Power Rating	125 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	5 Ω
Polarity	N-Channel
Power Dissipation	125 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	1000 V
Breakdown Voltage (Drain to Source)	1.00 kV
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	3.10 A
Rise Time	25 ns
Input Capacitance (Ciss)	980pF @25V(Vds)
Input Power (Max)	125 W
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	125 W
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Size-Length	10.41 mm
Size-Width	4.7 mm
Size-Height	9.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.

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