IRFD220PBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFD220PBF
Manufacturer

VISHAY
ChipWorker Part#

CW7048100
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

HVMDIP-4 N-CH 200V 800mA 800mΩ
Documentation

Datasheet

IRFD220PBF Global Supplier

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IRFD220PBF Specifications

Attribute	Attribute Value

Part Number	IRFD220PBF
Manufacturer	VISHAY
ChipWorker Part#	CW7048100
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	4 Pin
Case/Package	DIP-4
Voltage Rating (DC)	200 V
Current Rating	800 mA
Power Rating	1 W
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.8 Ω
Polarity	N-Channel
Power Dissipation	1 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	800 mA
Rise Time	22 ns
Input Capacitance (Ciss)	260pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	2500
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRFD220PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
Dynamic dV/dt rating
For automatic insertion
End stackable
Repetitive avalanche rated
Ease of paralleling
Simple drive requirements

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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