IRFH7004TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFH7004TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW5402475
Category

MOSFET, MOSFET Transistor
Package

PQFN-8
Description

PQFN N-CH 40V 259A
Documentation

Datasheet

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IRFH7004TRPBF Specifications

Attribute	Attribute Value

Part Number	IRFH7004TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW5402475
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PQFN-8
Number of Channels	1 Channel
Number of Positions	5 Position
Drain to Source Resistance (on) (Rds)	0.0011 Ω
Polarity	N-Channel
Power Dissipation	156 W
Threshold Voltage	3 V
Input Capacitance	6419 pF
Drain to Source Voltage (Vds)	40 V
Breakdown Voltage (Drain to Source)	40 V
Continuous Drain Current (Ids)	259A
Rise Time	51 ns
Input Capacitance (Ciss)	6419pF @25V(Vds)
Input Power (Max)	156 W
Fall Time	49 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	156W (Tc)
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Size-Length	6 mm
Size-Width	5 mm
Size-Height	0.85 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFH7004TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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