IRFL014NTRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFL014NTRPBF
Manufacturer

Infineon
ChipWorker Part#

CW3725043
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

SOT-223 N-CH 55V 2.7A
Documentation

Datasheet

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IRFL014NTRPBF Specifications

Attribute	Attribute Value

Part Number	IRFL014NTRPBF
Manufacturer	Infineon
ChipWorker Part#	CW3725043
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.16 Ω
Polarity	N-CH
Power Dissipation	1 W
Threshold Voltage	4 V
Input Capacitance	190pF @25V
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	2.7A
Rise Time	7.1 ns
Input Capacitance (Ciss)	190pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	3.3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.8 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFL014NTRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation of 1W is possible in a typical surface-mount application.
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating
Low static drain-to-source ON-resistance

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