IRFL4105PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFL4105PBF
Manufacturer

Infineon
ChipWorker Part#

CW71522351
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

SOT-223 N-CH 55V 5.2A
Documentation

Datasheet

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IRFL4105PBF Specifications

Attribute	Attribute Value

Part Number	IRFL4105PBF
Manufacturer	Infineon
ChipWorker Part#	CW71522351
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.045 Ω
Polarity	N-Channel
Power Dissipation	2.1 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	5.2A
Rise Time	12 ns
Input Capacitance (Ciss)	660pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFL4105PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with SOT or SOIC other packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating
Low static drain-to-source ON-resistance

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