IRFP1405PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFP1405PBF
Manufacturer

Infineon
ChipWorker Part#

CW6083253
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 55V 160A
Documentation

Datasheet

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IRFP1405PBF Specifications

Attribute	Attribute Value

Part Number	IRFP1405PBF
Manufacturer	Infineon
ChipWorker Part#	CW6083253
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0053 Ω
Polarity	N-Channel
Power Dissipation	310 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	160A
Rise Time	160 ns
Input Capacitance (Ciss)	5600pF @25V(Vds)
Input Power (Max)	310 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	310W (Tc)
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Size-Length	15.29 mm
Size-Width	19.71 mm
Size-Height	5.31 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFP1405PBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
Advanced process technology
Repetitive avalanche allowed up to Tjmax

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