IRFP250NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFP250NPBF
Manufacturer

Infineon
ChipWorker Part#

CW723126
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 200V 30A
Documentation

Datasheet

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IRFP250NPBF Specifications

Attribute	Attribute Value

Part Number	IRFP250NPBF
Manufacturer	Infineon
ChipWorker Part#	CW723126
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	214 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.075 Ω
Polarity	N-Channel
Power Dissipation	214 W
Threshold Voltage	4 V
Input Capacitance	2159 pF
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	30A
Rise Time	43 ns
Thermal Resistance	0.7℃/W (RθJC)
Input Capacitance (Ciss)	2159pF @25V(Vds)
Input Power (Max)	214 W
Fall Time	33 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	214W (Tc)
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFP250NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage (Vds) of 200V
Gate to source voltage of ±20V
On resistance Rds(on) of 75mohm at Vgs 10V
Power dissipation Pd of 214W at 25°C
Continuous drain current Id of 30A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C

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