IRFP4137PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFP4137PBF
Manufacturer

Infineon
ChipWorker Part#

CW11182866
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 300V 38A
Documentation

Datasheet

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IRFP4137PBF Specifications

Attribute	Attribute Value

Part Number	IRFP4137PBF
Manufacturer	Infineon
ChipWorker Part#	CW11182866
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	341 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.056 Ω
Polarity	N-Channel
Power Dissipation	341 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	38A
Rise Time	23 ns
Input Capacitance (Ciss)	5168pF @50V(Vds)
Fall Time	20 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	341W (Tc)
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFP4137PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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