IRFP4321PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFP4321PBF
Manufacturer

Infineon
ChipWorker Part#

CW2897559
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 150V 78A
Documentation

Datasheet

IRFP4321PBF Global Supplier

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IRFP4321PBF Specifications

Attribute	Attribute Value

Part Number	IRFP4321PBF
Manufacturer	Infineon
ChipWorker Part#	CW2897559
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	310 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.012 Ω
Polarity	N-Channel
Power Dissipation	310 mW
Threshold Voltage	5 V
Input Capacitance	4460 pF
Drain to Source Voltage (Vds)	150 V
Breakdown Voltage (Drain to Source)	150 V
Continuous Drain Current (Ids)	78A
Rise Time	60 ns
Input Capacitance (Ciss)	4460pF @25V(Vds)
Input Power (Max)	310 W
Fall Time	35 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	310W (Tc)
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Size-Length	15.87 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Low RDS (ON) reduces losses
Low gate charge improves the switching performance
Fully characterized avalanche SOA
30V Gate voltage rating improves robustness

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