IRFP4332PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFP4332PBF
Manufacturer

Infineon
ChipWorker Part#

CW4201690
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 250V 57A
Documentation

Datasheet

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IRFP4332PBF Specifications

Attribute	Attribute Value

Part Number	IRFP4332PBF
Manufacturer	Infineon
ChipWorker Part#	CW4201690
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	360 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.029 Ω
Polarity	N-CH
Power Dissipation	120 mW
Threshold Voltage	5 V
Input Capacitance	5860 pF
Drain to Source Voltage (Vds)	250 V
Continuous Drain Current (Ids)	57A
Input Capacitance (Ciss)	5860pF @25V(Vds)
Input Power (Max)	360 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	360W (Tc)
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Size-Length	15.87 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFP4332PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Advanced process technology
Low EPULSE rating to reduce power dissipation
Low Qg for fast response
High repetitive peak current capability for reliable operation
Short fall and rise times for fast switching
Repetitive avalanche capability for robustness and reliability

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