IRFP4868PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFP4868PBF
Manufacturer

Infineon
ChipWorker Part#

CW2281138
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 300V 70A
Documentation

Datasheet

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IRFP4868PBF Specifications

Attribute	Attribute Value

Part Number	IRFP4868PBF
Manufacturer	Infineon
ChipWorker Part#	CW2281138
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	517 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0255 Ω
Polarity	N-Channel
Power Dissipation	517 W
Threshold Voltage	3 V
Input Capacitance	10774 pF
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	70A
Rise Time	16 ns
Input Capacitance (Ciss)	10774pF @50V(Vds)
Input Power (Max)	517 W
Fall Time	45 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	517W (Tc)
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFP4868PBF is a 300V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability

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