IRFP90N20DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFP90N20DPBF
Manufacturer

Infineon
ChipWorker Part#

CW1854904
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 200V 94A
Documentation

Datasheet

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IRFP90N20DPBF Specifications

Attribute	Attribute Value

Part Number	IRFP90N20DPBF
Manufacturer	Infineon
ChipWorker Part#	CW1854904
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	580 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.023 Ω
Polarity	N-Channel
Power Dissipation	580 W
Threshold Voltage	5 V
Input Capacitance	6040 pF
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	94A
Rise Time	160 ns
Input Capacitance (Ciss)	6040pF @25V(Vds)
Input Power (Max)	580 W
Fall Time	79 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	580W (Tc)
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Size-Length	15.87 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRFP90N20DPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
Low gate to drain charge to reduce switching loss
Fully characterized capacitance and avalanche SOA

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