IRFPC50PBF ,High Voltage MOS Transistor - Vishay Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

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63 points

Part No

IRFPC50PBF
Manufacturer

Vishay Semiconductor
ChipWorker Part#

CW69852466
Category

High Voltage MOS Transistor
Package

TO-247
Description

MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.6Ω; ID 11A; TO-247AC; PD 180W; VGS +/-20V
Documentation

Datasheet
Ships from

Moscow
Наличие

59 pcs In Stock
Estimated Price

$ 1.43

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IRFPC50PBF Specifications

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Attribute	Attribute Value

Part Number	IRFPC50PBF
Manufacturer	Vishay Semiconductor
ChipWorker Part#	CW69852466
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247
Voltage Rating (DC)	600 V
Current Rating	11.0 A
Power Rating	180 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.6 Ω
Polarity	N-Channel
Power Dissipation	180 W
Threshold Voltage	4 V
Input Capacitance	2700pF @25V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	11.0 A
Rise Time	37 ns
Input Capacitance (Ciss)	2700pF @25V(Vds)
Fall Time	36 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	180 W
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 150℃
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

The IRFPC50PBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements
Isolated central mounting hole

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