IRFR2407PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR2407PBF
Manufacturer

Infineon
ChipWorker Part#

CW12871837
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 75V 42A
Documentation

Datasheet

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IRFR2407PBF Specifications

Attribute	Attribute Value

Part Number	IRFR2407PBF
Manufacturer	Infineon
ChipWorker Part#	CW12871837
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	110 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.026 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	4 V
Input Capacitance	2400pF @25V
Drain to Source Voltage (Vds)	75 V
Breakdown Voltage (Drain to Source)	75 V
Continuous Drain Current (Ids)	42A
Rise Time	90 ns
Input Capacitance (Ciss)	2400pF @25V(Vds)
Input Power (Max)	110 W
Fall Time	66 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR2407PBF is a HEXFET® seventh generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
Advanced process technology
Dynamic dV/dt rating
Fast switching
Fully avalanche rating
Low static drain-to-source ON-resistance

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