IRFR2607ZPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR2607ZPBF
Manufacturer

Infineon
ChipWorker Part#

CW63422428
Category

MOSFET, MOSFET Transistor
Package

TO-252
Description

DPAK N-CH 80V 45A
Documentation

Datasheet

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IRFR2607ZPBF Specifications

Attribute	Attribute Value

Part Number	IRFR2607ZPBF
Manufacturer	Infineon
ChipWorker Part#	CW63422428
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.022 Ω
Polarity	N-CH
Power Dissipation	110 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	75 V
Continuous Drain Current (Ids)	45A
Rise Time	59 ns
Input Capacitance (Ciss)	1440pF @25V(Vds)
Fall Time	28 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR2607ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Repetitive avalanche allowed up to Tjmax

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