IRFR3410PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR3410PBF
Manufacturer

Infineon
ChipWorker Part#

CW10977830
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 31A
Documentation

Datasheet

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IRFR3410PBF Specifications

Attribute	Attribute Value

Part Number	IRFR3410PBF
Manufacturer	Infineon
ChipWorker Part#	CW10977830
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	110 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.039 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	31A
Rise Time	27 ns
Input Capacitance (Ciss)	1690pF @25V(Vds)
Input Power (Max)	3 W
Fall Time	13 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3W (Ta), 110W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRFR3410PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
175°C Operating temperature
Dynamic dV/dt rating
Fully avalanche rated

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