IRFR4510TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR4510TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW3704940
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 63A
Documentation

Datasheet

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IRFR4510TRPBF Specifications

Attribute	Attribute Value

Part Number	IRFR4510TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW3704940
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0111 Ω
Polarity	N-Channel
Power Dissipation	143 W
Threshold Voltage	3 V
Input Capacitance	3031 pF
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	63A
Rise Time	42 ns
Input Capacitance (Ciss)	3031pF @50V(Vds)
Fall Time	34 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	143W (Tc)
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Size-Length	6.73 mm
Size-Width	7.49 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR4510TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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